Agradecimentos: The authors thank the Brazilian Nanotechnology Laboratory (LNNano/CNPEM) for granting access to their electron microscopy facilities. B.C. da S. also acknowledges FAPESP (15/24271-9) and CAPES scholarships. This work was financially supported by Brazilian agencies CNPq (grants...

Agradecimentos: The authors thank the Brazilian Nanotechnology Laboratory (LNNano/CNPEM) for granting access to their electron microscopy facilities. B.C. da S. also acknowledges FAPESP (15/24271-9) and CAPES scholarships. This work was financially supported by Brazilian agencies CNPq (grants 305769/2015-4, 441799/2016-7, 432882/2018-9, 429326/2018-1, and 306107/2019-8) and FAPESP (grants 19/07616-3, 15/16611-4, 12/11382-9, and 16/16365-6). The authors thank M. M. Tanabe for technical assistance with the optical setup

Abstract: The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano-and microstructures obtained...

Abstract: The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano-and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power-and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies estimated in the range of 50-80 meV and lower than 10 meV. No variation of the low-temperature PL spectra was observed for samples grown at different P precursor flows, while increasing Ga content enhanced the dominant broad emission at around 1.68 eV, suggesting that the group III organometallic precursor is the main source of impurities. Finally, Be-doped samples were grown, and their characteristic optical emission at 2.03 eV was identified. These results contribute to the understanding of impurity-related luminescence in hexagonal GaP, being useful for further crystal growth optimization required for the fabrication of optoelectronic devices

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

12/11382-9; 15/16611-4; 15/24271-9; 16/16365-6; 19/07616-3

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

305769/2015-4; 441799/2016-7; 429326/2018-1; 432882/2018-9; 306107/2019-8

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