Agradecimentos: We acknowledge the financial support from Fundacao de Amparoa Pesquisa do Estado de Sao Paulo (FAPESP), Fundacao de Amparo Pesquisa do Estado de Goias (FAPEG), Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Coordenacao de Aperfeicoamento de Pessoal de Ensino...

Agradecimentos: We acknowledge the financial support from Fundacao de Amparoa Pesquisa do Estado de Sao Paulo (FAPESP), Fundacao de Amparo Pesquisa do Estado de Goias (FAPEG), Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Coordenacao de Aperfeicoamento de Pessoal de Ensino Superior (CAPES), and Fundo de Apoio ao Ensino, Pesquisa e Extensao da Universidade Estadual de Campinas (FAEPEX)

Abstract: We report on the holographic recording on photorefractive Bi2TeO5 crystals using lambda = 633 nm wavelength light. We studied the behavior of this material under the action of this low photonic energy light and found out the presence of a fast and a slow hologram, both of photorefractive...

Abstract: We report on the holographic recording on photorefractive Bi2TeO5 crystals using lambda = 633 nm wavelength light. We studied the behavior of this material under the action of this low photonic energy light and found out the presence of a fast and a slow hologram, both of photorefractive nature and exhibiting rather high diffraction efficiencies. The faster and the slower holograms are based on the excitation and diffusion of oppositely charged carriers (likely electrons and holes). Relevant parameters for the photoactive centers responsible for both kind of holograms were characterized using purely holographic techniques. No evidences of non-photosensitive ionic charge carriers being involved in the recording process at room temperature nor self-fixing effects were found

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE GOIÁS - FAPEG

CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES

Aberto