Solid-vapor reaction growth of transition-metal dichalcogenide monolayers
Bo Li, Yongji Gongo, Zhili Hu, Gustavo moreno, Yingchao Yang, Gonglan Ye, Zhuhua Zhang, Sidong Lei, Zehua Jin, Elisabeth Bianco, Xiang Zhang, Weipeng Wang, Jun Lou, Douglas S. Galvao, Ming Tang, Boris I. Yakobson, Roberto Vajtai and Pulickel M. Ajayan
ARTIGO
Inglês
Agradecimentos: This work was supported in part by the Army Research Office (MURI grant W911NF-11-1-0362), and by FAME, one of six centers of STARnet, a Semiconductor Research Corporation Program sponsored by MARCO and DARPA. G.B. and D.S.G. acknowledge financial support from the Brazilian Agencies...
Ver mais
Agradecimentos: This work was supported in part by the Army Research Office (MURI grant W911NF-11-1-0362), and by FAME, one of six centers of STARnet, a Semiconductor Research Corporation Program sponsored by MARCO and DARPA. G.B. and D.S.G. acknowledge financial support from the Brazilian Agencies CNPq, CAPES, and FAPESP and also thank the Center for Computational Engineering and Sciences at Unicamp for financial support through the FAPESP/CEPID Grant 2013/08293-7. Z.H., Z.Z., and B.I.Y. acknowledge support from the DOE BES (Grant DE-SC0012547). M.T. acknowledges support from the DOE Office of Basic Energy Sciences Physical Behavior of Materials Program (DE-SC0014435). Y.Y. and J.L. acknowledge support from the Welch Foundation (Grant C-1716). Z.J. and J.L. are grateful for support through the AFOSR Grant FA9550-14-1-0268. We also thank Dr. Wu Zhou for providing STEM images and Dr. Qinghong Yuan and Dr. Xiaolong Zou (Rice University) as well as Prof. Chuanhong Jin and Prof. Mingsheng Xu (Zhejiang University) for helpful discussions
Ver menos
Abstract: Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the...
Ver mais
Abstract: Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe2, showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe2 monolayers. The growth steps involve the evaporation and reduction of MoO3 solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe2. The experimental results and proposed model were corroborated by abinitio Car-Parrinello molecular dynamics studies
Ver menos
CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ
COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES
FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP
2013/08293-7
Aberto
Solid-vapor reaction growth of transition-metal dichalcogenide monolayers
Bo Li, Yongji Gongo, Zhili Hu, Gustavo moreno, Yingchao Yang, Gonglan Ye, Zhuhua Zhang, Sidong Lei, Zehua Jin, Elisabeth Bianco, Xiang Zhang, Weipeng Wang, Jun Lou, Douglas S. Galvao, Ming Tang, Boris I. Yakobson, Roberto Vajtai and Pulickel M. Ajayan
Solid-vapor reaction growth of transition-metal dichalcogenide monolayers
Bo Li, Yongji Gongo, Zhili Hu, Gustavo moreno, Yingchao Yang, Gonglan Ye, Zhuhua Zhang, Sidong Lei, Zehua Jin, Elisabeth Bianco, Xiang Zhang, Weipeng Wang, Jun Lou, Douglas S. Galvao, Ming Tang, Boris I. Yakobson, Roberto Vajtai and Pulickel M. Ajayan
Fontes
|
Angewandte chemie international edition Vol. 55, n. 36 (Aug.., 2016), p. 10656-10661 |