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A patterning-based strain engineering for sub-22 nm node FinFETs

A patterning-based strain engineering for sub-22 nm node FinFETs

M. J. Suess, A. D. Barros, R. A. Minamisawa, R. Geiger, R. Spolenak, H. Sigg, M. Schmidt

ARTIGO

Inglês

Agradecimentos: This work was supported by the Swiss National Science Foundation under Project 10 130181

e propose a strain engineering approach that is based on the patterning and under etching of fins using strained Si grown on SiGe strain relaxed buffers. The method enhances the strain of the patterned Fins up to similar to 2.9 GPa without the need of epitaxial source and drain stressors. We report... Ver mais

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A patterning-based strain engineering for sub-22 nm node FinFETs

M. J. Suess, A. D. Barros, R. A. Minamisawa, R. Geiger, R. Spolenak, H. Sigg, M. Schmidt

										

A patterning-based strain engineering for sub-22 nm node FinFETs

M. J. Suess, A. D. Barros, R. A. Minamisawa, R. Geiger, R. Spolenak, H. Sigg, M. Schmidt

    Fontes

    IEEE Electron Device Letters

    Vol. 35, no. 3 (Mar., 2014), p. 300-302