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|Type:||Artigo de periódico|
|Title:||Small Angle X-ray Scattering And Infrared Spectroscopy Study Of Sputtered A-ge:h|
|Abstract:||The nanometer scale void structure of rf sputtered a-Ge:H thin films has been investigated using small angle X-ray scattering (SAXS) and infrared spectroscopy (IR). As grown samples were studies as a function of the three main deposition parameters: substrate temperature, hydrogen partial pressure and target DC bias. The present results suggest that the void formation is mainly determined by the Ge ad-atom mobility and the particle bombardment of the surface, the hydrogen partial pressure in the chamber having much les influence on the total void fraction and on their size distribution. © 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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