Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99923
Type: Artigo de periódico
Title: Small Angle X-ray Scattering And Infrared Spectroscopy Study Of Sputtered A-ge:h
Author: Mulato M.
Torriani I.L.
Chambouleyron I.
Abstract: The nanometer scale void structure of rf sputtered a-Ge:H thin films has been investigated using small angle X-ray scattering (SAXS) and infrared spectroscopy (IR). As grown samples were studies as a function of the three main deposition parameters: substrate temperature, hydrogen partial pressure and target DC bias. The present results suggest that the void formation is mainly determined by the Ge ad-atom mobility and the particle bombardment of the surface, the hydrogen partial pressure in the chamber having much les influence on the total void fraction and on their size distribution. © 1993.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(93)90515-Y
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906822&partnerID=40&md5=ad11e8b479fad4e2d91eb902a20ecf58
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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