Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99922
Type: Artigo de periódico
Title: Spin Dependent Photoconductivity In Hydrogenated Amorphous Silicon Germanium Alloys
Author: Graeff C.F.O.
Brandt M.S.
Eberhardt K.
Chambouleyron I.
Stutzmann M.
Abstract: We use spin-dependent photo-conductivity (SDPC) to study the recombination process of photo-excited carriers in hydrogenated amorphous silicon germanium alloys (a-SiχGe1-χ:H). The incorporation of Ge is marked by a sudden change in the SDPC signal (-Δσ/σ) from (a-Si:H)-like to (a-Ge:H)-like. The Ge atoms create new states which dominate transport and recombination of photo-created free carriers. In particular, the SDPC lineshape analysis indicates that the a-Si:H conduction band tail is affected by alloying with small concentrations of germanium. © 1993.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(93)90481-C
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027906882&partnerID=40&md5=ec1b7354d1a86faf057162b864048ed1
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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