Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99876
Type: Artigo de evento
Title: Spice Dc Parameter Extraction Of Mesfet's With Diffused And Grown Channel
Author: Lujan Alexandre S.
Chueirl Ivan I.
Swart Jacobus W.
Prince Francisco C.
Tessari Patricia H.
Abstract: An extraction procedure of SPICE DC parameters of GaAs MESFET's is presented. A program is developed, which produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes, producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.
Editor: Publ by IEEE, Piscataway, NJ, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027189365&partnerID=40&md5=e396dd8516258586e6614f451b7d1915
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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