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|Type:||Artigo de evento|
|Title:||Spice Dc Parameter Extraction Of Mesfet's With Diffused And Grown Channel|
|Author:||Lujan Alexandre S.|
Chueirl Ivan I.
Swart Jacobus W.
Prince Francisco C.
Tessari Patricia H.
|Abstract:||An extraction procedure of SPICE DC parameters of GaAs MESFET's is presented. A program is developed, which produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes, producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed.|
|Editor:||Publ by IEEE, Piscataway, NJ, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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