Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99796
Type: Artigo de periódico
Title: Au And Auzn Contacts On P-gasb And The Characteristics Of The Interfaces
Author: Galzerani J.C.
Oyama A.M.
Pizani P.S.
Landers R.
Morelhao S.L.
Cardoso L.P.
Abstract: We analyse the specific contact resistance ρ{variant}C and the interfacial microstructural characteristics (by Auger electron spectroscopy and X-ray diffraction) of Au and AuZn contacts on p-GaSb. The experiments showed that ρ{variant}C hardly depends on the inclusion of Zn in the metallic film or on the annealing processes, at least for the carrier concentrations available (p ≥ 1.6 × 1017 cm-3). However, the dependence of ρ{variant}C on the acceptor concentration leads us to conclude that field emission is the principal conduction mechanism. The efficacy of an Ar glow discharge in considerably reducing the oxide present at the GaSb substrate is demonstrated. We also show that rapid thermal annealing produces much thinner interface-reacted layers than does the conventional (resistive) heat treatment. © 1993.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0921-5107(93)90249-M
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027627070&partnerID=40&md5=b06cc9105a95e0e379112e8ded30d6b2
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-0027627070.pdf301.33 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.