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|Type:||Artigo de periódico|
|Title:||Direct Evaluation Of Interdiffusion Coefficients In Quantum Well Heterostructures Using Photoluminescence|
|Abstract:||Simple analytic expressions are derived to estimate approximately the interdiffusion coefficient (D) of partially disordered quantum well heterostructures (OWHs), directly from the measurement of the photoluminescence peak shift (Δhv) associated with layer interdiffusion. We have calculated Δhv as a function of the interdiffusion length LD=(Dt)1/2, where t is the interdiffusion time, in QWHs of two important III-v compound semiconductor systems: the strained layer InxGa1-xAs/GaAs (x=0.2) and the lattice matched GaAs/Ga1-xAlxAs (x=0.3). The calculations were undertaken under the framework of the envelope function approximation and Fick's law of diffusion, considering QW thicknesses (LZ) in the range of previous literature data. A simple relationship was derived for the variation of Δhv with the dimensionless parameter LD/LZ in each system, thus providing simple expressions for D as a function of Δhv, LZ and t. These expressions satisfactorily account for most D values previously reported within a factor of two, in the range of as-grown compositions and LZ values considered for each system. © 1993 Academic Press. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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