Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99791
Type: Artigo de periódico
Title: Direct Evaluation Of Interdiffusion Coefficients In Quantum Well Heterostructures Using Photoluminescence
Author: Furtado M.T.
Loural M.S.S.
Abstract: Simple analytic expressions are derived to estimate approximately the interdiffusion coefficient (D) of partially disordered quantum well heterostructures (OWHs), directly from the measurement of the photoluminescence peak shift (Δhv) associated with layer interdiffusion. We have calculated Δhv as a function of the interdiffusion length LD=(Dt)1/2, where t is the interdiffusion time, in QWHs of two important III-v compound semiconductor systems: the strained layer InxGa1-xAs/GaAs (x=0.2) and the lattice matched GaAs/Ga1-xAlxAs (x=0.3). The calculations were undertaken under the framework of the envelope function approximation and Fick's law of diffusion, considering QW thicknesses (LZ) in the range of previous literature data. A simple relationship was derived for the variation of Δhv with the dimensionless parameter LD/LZ in each system, thus providing simple expressions for D as a function of Δhv, LZ and t. These expressions satisfactorily account for most D values previously reported within a factor of two, in the range of as-grown compositions and LZ values considered for each system. © 1993 Academic Press. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1006/spmi.1993.1098
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-5244330666&partnerID=40&md5=3401d69ee2d2381b620670f011e85a57
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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