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|Type:||Artigo de evento|
|Title:||Mechanical Properties Of The Gaas/si  Interface By X-rays Hybrid Multiple Diffraction|
de Carvalho M.M.G.
|Abstract:||In this work, the directions of the secondary beams which are scattered by each mosaic block within an epitaxial layer allow to explain the position and profile of the LS hybrid multiple diffraction peak in the substrate Renninger Scan (RS). Furthermore, by choosing a secondary beam diffracted almost parallel to the interface, the LS peak is able to provide information even for thin (500A) layers. The position of the LS peak in the substrate RS of the GaAs layers grown by VCE on Si(001) provides the a values necessary to analyze the layer stress stat. As an external bending moment is applied on the sample to compensate the stress stemming from the difference in thermal expansion coefficient a split of both epilayer and buffer layer LS peaks can be observed. This split also indicates the degree of cohesion between these two layers.|
|Editor:||Publ by Materials Research Society, Pittsburgh, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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