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|Type:||Artigo de evento|
|Title:||Optimization Study Of Thermal Stability Of W/gaas Schottky Gates|
Swart Jacobus W.
|Abstract:||This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C.|
|Editor:||Publ by Materials Research Society, Pittsburgh, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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