Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99745
Type: Artigo de evento
Title: Optimization Study Of Thermal Stability Of W/gaas Schottky Gates
Author: Favoretto Marcio
Swart Jacobus W.
Abstract: This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C.
Editor: Publ by Materials Research Society, Pittsburgh, PA, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0027801565&partnerID=40&md5=6e7882b3de103005055999afcb479da0
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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