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Type: Artigo de evento
Title: Optimization Study Of Thermal Stability Of W/gaas Schottky Gates
Author: Favoretto Marcio
Swart Jacobus W.
Abstract: This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C.
Editor: Publ by Materials Research Society, Pittsburgh, PA, United States
Rights: fechado
Identifier DOI: 
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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