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|Type:||Artigo de evento|
|Title:||Low Frequency Remote Plasma Rapid Thermal Cvd System With Face Down Electrostatic Clamp Wafer Holder|
|Author:||Bonfim Marlio J.|
Swart Jacobus W.
Velasco Christian E.M.
Okura Juscelino H.
Verdonck Patrick B.
|Abstract:||A multiprocess CVD system with the following main features is designed and constructed: the wafer holder is made of a Si wafer with diameter larger than the process wafers. This larger holder produces a better temperature uniformity on the process wafer. A good thermal contact between holder and process wafer is obtained by an electrostatic clamp. The holder supports the process wafer facing down. A remote plasma is produced in a small chamber inside the process chamber. The 100 KHz RF frequency keeps the system very simple and cheap while still reasonable ionization is achieved. SiO 2 films were deposited using SiH 4 and O 2 with and without remote plasma of O 2. At low temperatures and 1.5 Torr, process activation energies of about 0.9 and 0.3 e V were obtained respectively.|
|Editor:||Publ by Materials Research Society, Pittsburgh, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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