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|Type:||Artigo de periódico|
|Title:||Reactive Ion Etching And Plasma Etching Of Tungsten|
|Abstract:||Tungsten etching has been studied in audio frequent plasmas with NF3-O2 and SF6-O2 mixtures. The influence of etch mode, gas flows, pressure and power has been investigated. It is possible to etch tungsten chemically but large concentrations of free fluorine are needed. These are supplied more easily by NF3 than by SF6. During chemical etching with NF3 fluorine diffuses into the tungsten. When in contact with air, the fluorine is replaced by oxygen, forming a tungsten oxide layer, which withstands further chemical etching. © 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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