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|Type:||Artigo de periódico|
|Title:||Evidence Of A Two-dimensional To Three-dimensional Transition In Si -doped Gaas Structures|
|Abstract:||We report on the change of character, from an isolated well to a superlattice, of multiple -doped structures as a function of the doping period ds. This effect is evidenced by the drastic change in the photoluminescence excitation spectra and the deviation on the total electron density extracted from Shubnikovde Haas oscillation measurements as ds decreases. Self-consistent-calculation results performed for these systems are used for comparison. © 1993 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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