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|Type:||Artigo de periódico|
|Title:||Time Resolved Photoluminescence Of Porous Silicon: Evidence For Tunneling Limited Recombination In A Band Of Localized States|
|Abstract:||Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 μs (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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