Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99694
Type: Artigo de periódico
Title: Time Resolved Photoluminescence Of Porous Silicon: Evidence For Tunneling Limited Recombination In A Band Of Localized States
Author: Tessler L.R.
Alvarez F.
Teschke O.
Abstract: Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 μs (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.109371
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-21544484303&partnerID=40&md5=990d6a3173390ac33009c45e4d522066
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-21544484303.pdf729.21 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.