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Type: Artigo de periódico
Title: Time Resolved Photoluminescence Of Porous Silicon: Evidence For Tunneling Limited Recombination In A Band Of Localized States
Author: Tessler L.R.
Alvarez F.
Teschke O.
Abstract: Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 μs (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.
Rights: aberto
Identifier DOI: 10.1063/1.109371
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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