Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99672
Type: Artigo de periódico
Title: On The Doping Efficiency Of Nitrogen In Hydrogenated Amorphous Germanium
Author: Chambouleyron I.
Zanatta A.R.
Abstract: This letter reports on the doping efficiency of nitrogen in a-Ge:H films of electronic quality. It has been found that nitrogen is an effective dopant in the a-Ge:H network, its doping efficiency being similar to the one corresponding to phosphorus in a-Si:H. The concentration of active nitrogen atoms decreases with impurity content following a square root dependence on total nitrogen. This behavior is similar to the one determined for column V dopants in a-Si:H films of electronic quality.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.108818
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0345183784&partnerID=40&md5=568722f9eaf9c6131eb183f561fec8aa
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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