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|Type:||Artigo de periódico|
|Title:||A Study Of Thin Al Films On Sn|
|Abstract:||Thin films of Al thermally deposited on an Sn substrate were studied by means of Auger spectroscopy. The observation of the 66 and 1389 eV Al Auger electrons whose surface sensitivities are quite different gave insight into the morphology of the Al films. All intensities were normalized to their corresponding bulk yields from Al and Sn. The ratio of Al 66 to Al 1389 normalized intensities was found to be constant at 0.43 ± 0.04 even though the normalized Al 1389 intensity varied from 0.05 to 0.95. These results are consistent with the growth of a film composed of islands of Al whose exposed surface is enriched in Sn through a diffusion process. Independent determinations of the rate of adsorption of O2 by these films are consistent with this model. © 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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