Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99670
Type: Artigo de periódico
Title: Real-time Optical Diagnostics For Measuring And Controlling Epitaxial Growth
Author: Aspnes D.E.
Kamiya I.
Tanaka H.
Bhat R.
Florez L.T.
Harbison J.P.
Quinn W.E.
Tamargo M.
Gregory S.
Pudensi M.A.A.
Schwarz S.A.
Brasil M.J.S.P.
Nahory R.E.
Abstract: We summarize recent applications of two real-time optical diagnostic techniques, reflectance difference spectroscopy (RDS) and spectroellipsometry (SE), to epitaxial growth on GaAs and atomic layer epitaxy (ALE) in particular. Using RDS, we obtain the first real-time spectroscopic data of the evolution of the (001) GaAs surface to cyclic and non-cycle exposures of atmospheric pressure H2, H2 and trimethylgallium, and H2 and arsine, which simulate growth by ALE. None of our observations is consistent with any previously proposed simple model, emphasizing the necessity of real-time measurements for the analysis of complex surface reactions. Using SE we have constructed a closed-loop system for controlling the compositions of AlxGa1-xAs layers grown by chemical beam epitaxy. We have produced various graded-compositional structures, including parabolic quantum wells 200 Å wide where the composition was controlled by analysis of the running outermost 3 Å (about 1 monolayer) of depositing material. © 1993.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0040-6090(93)90121-5
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0005286988&partnerID=40&md5=bcd9322e4d80d014877ec98b2646f022
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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