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|Type:||Artigo de periódico|
|Title:||Monte Carlo Simulation Study On The Flow Conditions Of A Vacuum Chemical Epitaxy System|
de Carvalho M.M.G.
|Abstract:||This work presents a numerical simulation, using Monte Carlo method, of the gas phase behavior in a vacuum chemical epitaxy (VCE) system, without hydride cracker. From this simulation, it is shown that the growth rate depends on the gas - mainly hydride -pressure in the growth chamber. This dependence is stronger for pressures above 10-3 Torr, where the growth rate decreases almost linearly with increasing pressure. The slope of this curve decreases with the sticking coefficient of the organometallic molecules, that is, when growth temperature increases. Experimental results agree well with the predicted results which can, qualitatively, explain the growth rate behavior with the hydride flows used in VCE, and show that gas phase collisions should not be neglected even in chemical beam epitaxy (CBE) systems. © 1992.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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