Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99584
Type: Artigo de periódico
Title: Nonequilibrium Luminescence At The E0+Δ0 Gap In Gaas With Si-δ Doping
Author: Mestres N.
Cerdeira F.
Meseguer F.
Ruiz A.
Silveira J.P.
Briones F.
Ploog K.
Abstract: We studied the light scattering spectra of three molecular beam epitaxy GaAs samples with Si-δ doping. A broad feature appears in these spectra which is similar to that attributed by other authors to resonant Raman scattering by electronic intersubband transitions. By studying the dependence of this emission on exciting laser photon energy we believe that this line is really produced by nonequilibrium luminescence at the E0+Δ 0 gap.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.350492
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-16644365734&partnerID=40&md5=e0668924449667bc6726978a51ddce55
Date Issue: 1992
Appears in Collections:Unicamp - Artigos e Outros Documentos

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