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|Type:||Artigo de periódico|
|Title:||Nonequilibrium Luminescence At The E0+Δ0 Gap In Gaas With Si-δ Doping|
|Abstract:||We studied the light scattering spectra of three molecular beam epitaxy GaAs samples with Si-δ doping. A broad feature appears in these spectra which is similar to that attributed by other authors to resonant Raman scattering by electronic intersubband transitions. By studying the dependence of this emission on exciting laser photon energy we believe that this line is really produced by nonequilibrium luminescence at the E0+Δ 0 gap.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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