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Type: Artigo de periódico
Title: Compensation In Heavily Carbon-doped Gaalas Grown By Vacuum Chemical Epitaxy
Author: Cotta M.A.
de Carvalho M.M.G.
Abstract: In this work we discuss compensation mechanisms in heavily (NA - ND ≈ 1020 cm-3) carbon-doped GaAlAs grown by vacuum chemical epitaxy (VCE). Analysis using photoluminescence, double-crystal X-ray diffraction and Hall mobility shows that carbon may be incorporated into the GaAlAs layer, in sites other than those of As, at concentrations greater than 1018 cm-3. The incorporation of carbon in group III sites might give rise to deep donor levels that could generate radiative complexes and explain the deep bands in the 300 K photoluminescence spectra of these samples. © 1992.
Rights: fechado
Identifier DOI: 10.1016/0921-5107(92)90329-8
Date Issue: 1992
Appears in Collections:Unicamp - Artigos e Outros Documentos

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