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|Type:||Artigo de periódico|
|Title:||Transport Properties Of Nitrogen-doped Hydrogenated Amorphous Germanium Films|
|Abstract:||This paper discusses experimental data referring to the electronic properties of N-doped hydrogenated amorphous germanium films (a-Ge:H). The a-Ge:H films, prepared by rf sputtering, possess a low density of electronic states in the pseudogap (in the low 1016 cm-3 range) and exhibit a temperature-activated dark conductivity down to below 200 K. It is shown that N atoms incorporated into the a-Ge:H films produce large changes of both the room-temperature dark conductivity and the activation energy. The results of the present work are consistent with the overall picture of the active doping mechanism of group-V elements in tetrahedrally coordinated amorphous semiconductors. The donor level introduced by fourfold-coordinated nitrogen in a-Ge:H is found to be around 50 meV below the conduction-band edge. © 1992 The American Physical Society.|
|Citation:||Physical Review B. , v. 46, n. 4, p. 2119 - 2125, 1992.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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