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|Type:||Artigo de periódico|
|Title:||Hydrogen Diffusion In Rf-sputtered A-ge: H Thin Films|
|Author:||de O. Graeff C.F.|
Freire Jr. F.L.
|Abstract:||Hydrogen diffusion experiments on a-Ge:H films were studied using the Elastic Recoil Detection (ERD) technique and infrared (IR) transmission spectra. The results indicate two kinds of diffusion processes: one due to the desorption of molecular hydrogen through microvoids and another due to dispersive-like diffusion of H atoms in the amorphous network. The dispersive parameter, To, related to the exponential distribution of energy barriers giving rise to dispersive diffusion, is found to be 1400 K. The constant distance diffusion coefficient is temperature activated with an activation energy of 0.4 ± 0.2 eV. A possible correlation between hydrogen diffusion and light-induced metastability in a-Ge:H is discussed. © 1991 Elsevier Science Publishers B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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