Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99311
Type: Artigo de periódico
Title: Properties Of Alxga1-xas With An Alas Buffer Layer On Si Substrates Grown By Metalorganic Vapor Phase Epitaxy
Author: Bernussi A.A.
Iikawa F.
Motisuke P.
Basmaji P.
Abstract: We present the details of growth by metalorganic vapor phase epitaxy and characterization of undoped and Sn doped AlxGa1-xAs (0≤ x ≤ 0.3) on Si substrates with AlAs buffer layer. Double X-ray diffraction has been performed on these samples and the estimated dislocation density is in the order of 8x106 cm-2. The carrier concentration in these samples were obtained by Schubnikov-De Haas effect and the observed oscillations compare very well with the AlxGa1-xAs grown on GaAs substrates. The photoluminescence efficiency in the Sn-doped AlxGa1-xAs/Si sample is about 640 times greater than in the undoped one and this is attributed to annihilation of non-radiative centers by Sn atoms. The biaxial stress in these films is estimated from the peak positions in the photoluminescence spectra measured as a function of temperature. © 1991.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-0248(91)90240-6
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0026103747&partnerID=40&md5=26f321ecb2a59765409fcacb117e7c28
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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