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Type: Artigo de periódico
Title: Structure Of Interfaces In A-si
Author: Santos P.V.
Hundhausen M.
Ley L.
Viczian C.
Abstract: We present experimental results on the atomic structure of the interfaces between a-Si:H and a-SiNx:H layers obtained by analyzing the intensity of the Raman lines from zone-folded acoustic phonons and of the peaks of x-ray diffraction at grazing angles. We determine the width of these interfaces and their stability under thermal annealing in temperatures below the crystallization temperature.
Rights: aberto
Identifier DOI: 10.1063/1.347364
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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