Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99301
Type: Artigo de periódico
Title: Structure Of Interfaces In A-si
Author: Santos P.V.
Hundhausen M.
Ley L.
Viczian C.
Abstract: We present experimental results on the atomic structure of the interfaces between a-Si:H and a-SiNx:H layers obtained by analyzing the intensity of the Raman lines from zone-folded acoustic phonons and of the peaks of x-ray diffraction at grazing angles. We determine the width of these interfaces and their stability under thermal annealing in temperatures below the crystallization temperature.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.347364
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-36449000346&partnerID=40&md5=751e79a706d726a8df71872cd58a7fef
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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