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|Type:||Artigo de periódico|
|Title:||Growth And Characterization Of Gaas On Si By Vacuum Chemical Epitaxy|
De Carvalho M.M.G.
|Abstract:||Undoped GaAs epitaxial layers have been grown on Si substrates by vacuum chemical epitaxy. Triethylgallium and arsine were used as gallium and arsenic sources, respectively. The layers have shown KOH etch pit densities in the range 7×106-2×107 cm-2 and residual hole concentration of 1015 cm-3. The layer crystallinity was found to be strongly influenced by the substrate preparation and also by the water partial vapor pressure in the growth chamber.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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