Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99216
Type: Artigo de periódico
Title: Effect Of Temperature On The Built-in Electric Field In Gaas Gaaℓas:si Heterostructures
Author: Martins J.M.V.
Scolfaro L.M.R.
Mendonca C.A.C.
Meneses E.A.
Leite J.R.
Abstract: We investigate the effects of temperature on the built-in electric field in a modulation-doped GaAs GaAℓAs heterojunction by using the photoreflectance technique. Franz-Keldysh oscillations-like structures are observed above the GaAs band gap and the magnitude of the electric field as a function of temperature are evaluated. By performing theoretical self-consistent calculations, taking into account temperature effects, the interface potential profiles and electric fields are obtained. The agreement between the calculated electric fields at the Fermi level and the values extracted from experiment indicates that the observed FK oscillations are due to the electric field at the heterojunction. © 1991.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0749-6036(91)90238-M
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025844373&partnerID=40&md5=d593d38ad3849296b1de4a32cf48ce57
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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