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Type: Artigo de periódico
Title: Dispersion In Finlines On Semiconductor And The S-parameters Of A Step Discontinuity
Author: Fernandez H.C.C.
Oliveira J.d.R.S.
Giarola A.J.
Abstract: The Transverse Transmission Line method is used for the characterization of bilateral and unilateral finlines on a semiconductor substrate and in conjunction with the modal method, for the calculation of the scattering parameters due to a step discontinuity on a unilateral finline with a lossless dielectric substrate. Numerical results of the effective dielectric constant, attenuation constant and characteristic impedance for the bilateral and unilateral finlines on semiconductor substrates, and results of scattering parameters of a step discontinuity for unilateral finline, are presented. © 1991 Plenum Publishing Corporation.
Editor: Kluwer Academic Publishers-Plenum Publishers
Rights: fechado
Identifier DOI: 10.1007/BF01010883
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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