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Type: Artigo de periódico
Title: A General Model For Motion Bound To An Impurity In An Anisotropic Semiconductor
Author: Casasayas J.
Nunes A.
Ozorio de Almeida A.M.
Abstract: The one-electron Hamiltonian for motion bound to an impurity in an anisotropic semiconductor can be crudely approximated by the anisotropic Kepler model. We have established that the chaos found in the underlying classical motion is insensitive to variations of the potential required by more realistic models, and that the qualitative behaviour of the chaotic orbits gives information on the degree of the dominant term of the potential near the singularity. © 1991.
Rights: fechado
Identifier DOI: 10.1016/0167-2789(91)90090-V
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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