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|Type:||Artigo de periódico|
|Title:||A General Model For Motion Bound To An Impurity In An Anisotropic Semiconductor|
Ozorio de Almeida A.M.
|Abstract:||The one-electron Hamiltonian for motion bound to an impurity in an anisotropic semiconductor can be crudely approximated by the anisotropic Kepler model. We have established that the chaos found in the underlying classical motion is insensitive to variations of the potential required by more realistic models, and that the qualitative behaviour of the chaotic orbits gives information on the degree of the dominant term of the potential near the singularity. © 1991.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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