Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99153
Type: Artigo de periódico
Title: Electrical Conductivity Of Amorphous Silicon Doped With Rare-earth Elements
Author: Castilho J.H.
Chambouleyron I.
Marques F.C.
Rettori C.
Alvarez F.
Abstract: This work reports on the electrical properties of a-Si samples doped with elements of the lanthanide series. A detailed study of gadolinium-doped a-Si is presented. It has been found that the introduction of rare-earth elements into the amorphous-silicon network produces large changes in the conductivity. An analysis of the experimental conductivity as a function of temperature and rare-earth content, together with the optical and electron-spin-resonance data, leads us to suggest that rare-earth-acceptor-like states located in the lower half of the pseudogap may be responsible for the measured properties. © 1991 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.43.8946
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000379659&partnerID=40&md5=a8adf25aff6b1504daac430684c62a57
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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