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Type: Artigo de periódico
Title: Effect Of Ambipolar Diffusion On The Hot-carrier Relaxation In Semiconductors
Author: Algarte A.C.S.
Abstract: The effect of the change in the carrier density due to ambipolar diffusion on the cooling of hot plasmas in semiconductors is investigated. It is shown that the diffusion contributes to a warm-up of the plasma. © 1991 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.43.2408
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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