Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99119
Type: Artigo de evento
Title: Staebler-wronski Effect In Hydrogenated Amorphous Germanium Films
Author: Graeff C.F.de O.
Santos P.V.
Marcano G.
Chambouleyron I.
Abstract: The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF sputtering method and on their photodegradation resulting from light soaking at different temperatures and under different irradiation conditions (Staebler-Wronski effect). The material parameters of interest for solar device manufacturing presented here are among the best reported to date: a low density of electron states in the pseudogap, a temperature-activated dark conductivity (Ea ≥ 0.5 eV) down to below 200 K, and a photo-to-dark conductivity ratio of up to 2.0 under AM1 conditions. The dark conductivity and the photoconductivity of the a-Ge:H samples decrease after light soaking. The changes are metastable and both the defect formation and the defect annealing processes are temperature activated. As in the case of a-Si:H films, the time evolution of the conductivity changes is well represented by a stretched exponential type of decay with activated time constants.
Editor: Publ by IEEE, Piscataway, NJ, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025420873&partnerID=40&md5=d41fc605f277608e82cc41cfddd691be
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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