Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Mbe Growth And Characterization Of δ-doping In Gaas And Gaas/si
Author: Basmaji P.
Ceschin A.M.
Siu Li M.
Hipolito O.
Bernussi A.A.
IIkawa F.
Motisuke P.
Abstract: We have investigated the δ-doped GaAs with different cap layer thickness, donor concentrations and intensities of pumping light grown by molecular beam epitaxy, using photoreflectance spectroscopy. The spectra show transitions that we assigned to confined electronic states in the potential of the δ-doping. These electronic state levels depend strongly on the cap layer thickness. © 1990.
Rights: fechado
Identifier DOI: 10.1016/0039-6028(90)90327-5
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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