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|Type:||Artigo de periódico|
|Title:||Hot Electrons In Delta-doped Gaas(si) Layers|
Oliveira Jr. A.T.
|Abstract:||Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations Ns ranging from 1012 to 1013cm-2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as Ns increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities. © 1990.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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