Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99094
Type: Artigo de periódico
Title: Hot Electrons In Delta-doped Gaas(si) Layers
Author: Mendonca C.A.C.
Scolfaro L.M.R.
Plentz F.
Meneses E.A.
Oliveira Jr. A.T.
Rodrigues R.
Guimaraes P.S.S.
Bezerra J.C.
Dias I.F.L.
Oliveira A.G.
Abstract: Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) layers, with carrier sheet concentrations Ns ranging from 1012 to 1013cm-2. Under the same excitation intensity, the luminescence spectra of all samples show a high energy tail which becomes more pronounced as Ns increases. Well defined electron temperatures, higher than the lattice temperature, are obtained, characterizing the electron heating effect in this system. The architecture of the delta-doping allows to observe hot electrons even at relatively low laser pumping intensities. © 1990.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(90)90231-Y
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025493141&partnerID=40&md5=ee93b588c04b051c59696daf858eae5b
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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