Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Photoreflectance Measurements On Si δ-doped Gaas Samples Grown By Molecular-beam Epitaxy
Author: Bernussi A.A.
Iikawa F.
Motisuke P.
Basmaji P.
Li M.S.
Hipolito O.
Abstract: We investigate δ-doped GaAs samples grown by molecular-beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic sub-bands in the δ-doped potential well that take into account the diffusion of the dopants.
Rights: aberto
Identifier DOI: 10.1063/1.344976
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-4243118315.pdf556.86 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.