Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99014
Type: Artigo de periódico
Title: Considerations On The Design Of A Dc Sputtering System Concerning Its Application To Ta And Si Deposition
Author: Silveira M.A.
Mammana A.P.
Abstract: Looking for simple engineering solutions, we built a three target dc sputtering system of 45 cm diameter, which performance was studied for Ta and Si deposition, for two shielding geometries and different pressures, target-to-substrate distances, argon fluxes and power densities. The thickness uniformity of the deposited films, without rotating the substrates, was better than ±3%, for diameters of 50 mm, with the single shield, 70 mtorr and 25 mm distance. With the supplementary ring, designed to avoid the target rim bombardment, the uniformity fell to ±10%, evidencing the target rim compensation of the thickness along the substrates. At higher pressures and distances this compensation decreased, this behaviour being attributed to a greater randomization of the particle trajectories. Typical deposition rates were 280 Å min-1 at 1.7 W cm-2 for Ta and 110 Å min-1 at 1.0 W cm-2 for Si. The Ta resistivity was between 1.8 and 10.1 mμ cm and its density was 12.4±0.3 g cm-3, which proved to be a low density form, with bcc structure strongly oriented in (110) direction. The Si films were amorphous with an Ar content up to 3.5% and 7.5% of 0. © 1990.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0042-207X(90)93966-M
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025563893&partnerID=40&md5=6850d415ef94b4e00e4b4b4d114dbf40
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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