Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/99013
Type: Artigo de periódico
Title: Characterization Of Augeni Ohmic Contacts On N-gaas Using Electrical Measurements, Auger Electron Spectroscopy And X-ray Diffractometry
Author: Oliveira J.B.B.
Olivieri C.A.
Galzerani J.C.
Pasa A.A.
Cardoso L.P.
de Prince F.C.
Abstract: Ohmic contacts obtained by deposition of (AuGeNi + AuNi) films on n-GaAs substrates were studied. The specific contact resistance (ρ{variant}c) was used to characterize the electrical bahavior of the contacts and the interface microstructure was analysed using Auger Electron Spectroscopy (AES) and X-ray diffractometry. ρ{variant}c was shown to be inversely proportional to the semiconductor carrier concentration. The lowest ρ{variant}c value for a conventional annealing (in a resistive furnace) was obtained at 470°C for 3 min. It was observed the possibility of obtaining contacts with identical ρ{variant}c values using both conventional or rapid thermal annealing (RTA), but AES analysis showed that the interface reacted layer was wider for the first process. X-ray diffractometry has shown that various compounds appear due to annealing, e.g. β -AuGa, Au7Ga2 and Ga4Ni3. The relationships between the electrical and the structural characteristics of the contacts are discussed. © 1990.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0042-207X(90)93790-P
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0025529886&partnerID=40&md5=b2d6d31a9b64ef0bb22fb3178e7d0c5c
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-0025529886.pdf344.24 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.