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Type: Artigo de periódico
Title: Continuous To Bound Interband Transitions In δ-doped Gaas Layers
Author: Bernussi A.A.
Brum J.A.
Motisuke P.
Basmaji P.
Li M.S.
Hipolito O.
Abstract: We have studied the interband transitions of several silicon δ-doped GaAs samples using the technique of photoreflectance spectroscopy. The features observed in the optical spectra above the GaAs fundamental energy gap are tentatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction-band. The observed interband transition energies are in qualitative agreement with the self-consistently calculated ones taking into account the spreading of dopants. © 1990.
Rights: fechado
Identifier DOI: 10.1016/0749-6036(90)90093-M
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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