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dc.typeArtigo de periódicopt_BR
dc.titleAes Sputter Depth Profiles Applied To Interface Analysis Of Gainas/inp Grown By Atmospheric Pressure Mocvdpt_BR
dc.contributor.authorMorais J.pt_BR
dc.contributor.authorMachado A.M.pt_BR
dc.contributor.authorSacilotti M.A.pt_BR
dc.contributor.authorLanders R.pt_BR
unicamp.authorMorais, J., IFGW, UNICAMP, Campinas, S.P., Brazilpt_BR
unicamp.authorLanders, R., IFGW, UNICAMP, Campinas, S.P., Brazilpt_BR, A.M., CPqD/TELEBRAS, S.P., Brazilpt, M.A., CPqD/TELEBRAS, S.P., Brazilpt
dc.description.abstractInterfaces between InP and GaInAs layers, grown by atmospheric pressure MOCVD, have been studied using Auger electron spectroscopy and Ar+ sputtering. The abruptness of the interfaces in this kind of epitaxial growth depends on the microscopic morphology of the growing surface (roughness) and on the way in which the active gases are substituted when changing the composition of the layers. We have investigated the influence of interrupting the growth at hetero-interfaces on the quality of the interface. It is shown that the abruptness of the interface improved with longer growth interruptions. © 1990.en
dc.relation.ispartofApplied Surface Sciencept_BR
dc.identifier.citationApplied Surface Science. , v. 44, n. 2, p. 161 - 164, 1990.pt_BR
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dc.description.provenanceMade available in DSpace on 2015-11-26T14:40:38Z (GMT). No. of bitstreams: 1 2-s2.0-0025416859.pdf: 238624 bytes, checksum: ea551113b326840adb5bf5f064c71608 (MD5) Previous issue date: 1990en
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