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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbnnullpt
dc.typeArtigo de periódicopt_BR
dc.titleAes Sputter Depth Profiles Applied To Interface Analysis Of Gainas/inp Grown By Atmospheric Pressure Mocvdpt_BR
dc.contributor.authorMorais J.pt_BR
dc.contributor.authorMachado A.M.pt_BR
dc.contributor.authorSacilotti M.A.pt_BR
dc.contributor.authorLanders R.pt_BR
unicamp.authorMorais, J., IFGW, UNICAMP, Campinas, S.P., Brazilpt_BR
unicamp.authorLanders, R., IFGW, UNICAMP, Campinas, S.P., Brazilpt_BR
unicamp.author.externalMachado, A.M., CPqD/TELEBRAS, S.P., Brazilpt
unicamp.author.externalSacilotti, M.A., CPqD/TELEBRAS, S.P., Brazilpt
dc.description.abstractInterfaces between InP and GaInAs layers, grown by atmospheric pressure MOCVD, have been studied using Auger electron spectroscopy and Ar+ sputtering. The abruptness of the interfaces in this kind of epitaxial growth depends on the microscopic morphology of the growing surface (roughness) and on the way in which the active gases are substituted when changing the composition of the layers. We have investigated the influence of interrupting the growth at hetero-interfaces on the quality of the interface. It is shown that the abruptness of the interface improved with longer growth interruptions. © 1990.en
dc.relation.ispartofApplied Surface Sciencept_BR
dc.publishernullpt_BR
dc.date.issued1990pt_BR
dc.identifier.citationApplied Surface Science. , v. 44, n. 2, p. 161 - 164, 1990.pt_BR
dc.language.isoenpt_BR
dc.description.volume44pt_BR
dc.description.issuenumber2pt_BR
dc.description.initialpage161pt_BR
dc.description.lastpage164pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn1694332pt_BR
dc.identifier.doi10.1016/0169-4332(90)90104-8pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0025416859&partnerID=40&md5=278d67ab789a02757a0f9150341f6f61pt_BR
dc.date.available2015-06-30T14:01:23Z
dc.date.available2015-11-26T14:40:38Z-
dc.date.accessioned2015-06-30T14:01:23Z
dc.date.accessioned2015-11-26T14:40:38Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T14:01:23Z (GMT). No. of bitstreams: 1 2-s2.0-0025416859.pdf: 238624 bytes, checksum: ea551113b326840adb5bf5f064c71608 (MD5) Previous issue date: 1990en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:40:38Z (GMT). No. of bitstreams: 1 2-s2.0-0025416859.pdf: 238624 bytes, checksum: ea551113b326840adb5bf5f064c71608 (MD5) Previous issue date: 1990en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/98941
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/98941-
dc.identifier.idScopus2-s2.0-0025416859pt_BR
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