Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98932
Type: Artigo de periódico
Title: Density Of States And Optical-absorption Spectra Of Shallow Impurities In Quantum Wells Under The Influence Of A Longitudinal Electric Field
Author: Weber G.
Abstract: We have calculated the densities of states and the optical-absorption spectra of shallow donors and acceptors in GaAs-(Ga,Al)As quantum wells under the influence of a constant electric field applied parallel to the growth axis. The impurity binding energies were calculated as functions of the impurity position in a quantum well of infinite depth, where we have used a variational procedure within the effective-mass approximation. The main feature found was a quenching of one of the peaks due to interface impurities at moderate electric fields. We compare these optical-absorption spectra with previous calculations in the absence of an electric field. © 1990 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevB.41.10043
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33644479336&partnerID=40&md5=c8e6680e2bdea4c8ad0460d70e7fb31f
Date Issue: 1990
Appears in Collections:Unicamp - Artigos e Outros Documentos

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