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|Type:||Artigo de periódico|
|Title:||Density Of States And Optical-absorption Spectra Of Shallow Impurities In Quantum Wells Under The Influence Of A Longitudinal Electric Field|
|Abstract:||We have calculated the densities of states and the optical-absorption spectra of shallow donors and acceptors in GaAs-(Ga,Al)As quantum wells under the influence of a constant electric field applied parallel to the growth axis. The impurity binding energies were calculated as functions of the impurity position in a quantum well of infinite depth, where we have used a variational procedure within the effective-mass approximation. The main feature found was a quenching of one of the peaks due to interface impurities at moderate electric fields. We compare these optical-absorption spectra with previous calculations in the absence of an electric field. © 1990 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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