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|Type:||Artigo de periódico|
|Title:||Acceptor-related Photoluminescence Study In Gaas/ga1-xalxas Quantum Wells|
|Abstract:||A theoretical study of the photoluminescence spectrum associated with shallow acceptors in GaAs-(Ga,Al)As quantum wells is performed. As a general feature, there are two special structures in the acceptor-related spectrum: an edge associated with transitions involving acceptors at the center of the well, and a peak associated with transitions related to on-edge acceptors. The photoluminescence line shape depends on the temperature, the quasi-Fermi energy of the conduction-subband electron gas, and on the acceptor distribution along the quantum well. It is suggested that an analysis of the acceptor- photoluminescence line shape could allow an experimental determination of the quasi-Fermi-energy level of the conduction-subband electron gas as well as of the on-edge-acceptor binding energy. Experimental results of unintentionally doped multiple-quantum-well GaAs-Ga0.7Al0.3As samples by Miller et al. [Phys. Rev. B 25, 3871 (1982)] and of single quantum wells of GaAs-Ga0.85Al0.15As by Meynadier et al. [J. Appl. Phys. 58, 4307 (1985)] are in excellent agreement with theoretical results obtained with a homogeneous distribution of acceptor impurities along the GaAs layer and a convenient choice of the quasi-Fermi-energy level. © 1990 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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