Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98867
Type: Artigo de periódico
Title: Structural Characterization Of Transparent Semiconducting Thin Films Of Sno2 And In2o3
Author: Mammana A.P.
Braga E.S.
Torriani I.
Anderson R.L.
Abstract: The structural characteristics of optically transparent electrically conducting thin films of SnO2 and of In2O3 deposited onto amorphous substrates and onto monocrystalline silicon substrates were studied by X-ray diffraction. The SnO2 films, which were prepared by chemical vapor deposition, were polycrystalline with a grain size of 7-15 nm and with a marked (200) preferred orientation. The evaporated In2O3 films had an average grain size of 3-10 nm but showed no preferential orientation. © 1981.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0040-6090(81)90149-8
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0019078567&partnerID=40&md5=55d68a88d6b43299f5ac9aae5479a90c
Date Issue: 1981
Appears in Collections:Unicamp - Artigos e Outros Documentos

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