Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Structural Characterization Of Transparent Semiconducting Thin Films Of Sno2 And In2o3|
|Abstract:||The structural characteristics of optically transparent electrically conducting thin films of SnO2 and of In2O3 deposited onto amorphous substrates and onto monocrystalline silicon substrates were studied by X-ray diffraction. The SnO2 films, which were prepared by chemical vapor deposition, were polycrystalline with a grain size of 7-15 nm and with a marked (200) preferred orientation. The evaporated In2O3 films had an average grain size of 3-10 nm but showed no preferential orientation. © 1981.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.