Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98864
Type: Artigo de periódico
Title: Recombination Centers And The Spatial Distribution Of Spontaneous Emission In N-type Gaas At High Excitation Levels
Author: Winogradoff N.N.
Ripper J.E.
da Silva J.C.
Abstract: We have investigated the excitation intensity dependence of the spatial distribution of the emission of photoluminescence from heavilly doped n-type GaAs. It was found that above a certain threshold of excitation, maximum emission originated from an anular zone surrounding the point of excitation rather than from that point. This new effect is explained in terms of the quasi Fermi level dependence of the rate of recombination through recombination centers. © 1980.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0038-1098(81)91020-6
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0019437570&partnerID=40&md5=ccce29b95ace41e2bcf61e46e0be0f0c
Date Issue: 1981
Appears in Collections:Unicamp - Artigos e Outros Documentos

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