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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbnpt
dc.typeArtigo de periódicopt_BR
dc.titleRadiative Recombination Of Deep Centers In Znse: Inpt_BR
dc.contributor.authorMeneses E.A.pt_BR
dc.contributor.authorMeneses G.D.pt_BR
dc.contributor.authorMotisuke P.pt_BR
unicamp.authorMeneses, E.A., Instituto de Física Gleb Wataghin Universidade Estadual de Campinas, 13100 Campinas Sp., Brazilpt_BR
unicamp.authorMeneses, G.D., Instituto de Física Gleb Wataghin Universidade Estadual de Campinas, 13100 Campinas Sp., Brazilpt_BR
unicamp.authorMotisuke, P., Instituto de Física Gleb Wataghin Universidade Estadual de Campinas, 13100 Campinas Sp., Brazilpt_BR
dc.description.abstractThe photoluminescence of In dopped ZnSe is studied under excitation with photon energy less and greater than the band gap energy. In the first case two emission bands A(1.098 eV) and B(2.015 eV) are observed and in the last case, three: A, B and C (2.233 eV). Band C should appear also in the first case since its transition energy is less than the excitation energy. We attribute the absence of the C line to the frequency dependence of the optical photoionization cross-section (OPCS) of the deep levels associated with the emission bands. In order to check this assumption we measured the photoluminescence excitation spectra at 77 K. This gives us the OPCS of the deep levels. The OPCS of band C is quite different from those of bands A and B. The latter are similar to each other and both are well explained by a theoretical model developed by Chantre et al. Besides, we tentatively interpret bands A, B and C as transitions involving donor and characteristical deep centers in ZnSe: Copper and self activated center. © 1983.en
dc.relation.ispartofPhysica B+Cpt_BR
dc.publisherpt_BR
dc.date.issued1983pt_BR
dc.identifier.citationPhysica B+c. , v. 117-118, n. PART 1, p. 160 - 162, 1983.pt_BR
dc.language.isoenpt_BR
dc.description.volume117-118pt_BR
dc.description.issuenumberPART 1pt_BR
dc.description.initialpage160pt_BR
dc.description.lastpage162pt_BR
dc.rightsfechadopt_BR
dc.sourceScopuspt_BR
dc.identifier.issn3784363pt_BR
dc.identifier.doi10.1016/0378-4363(83)90469-2pt_BR
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-49049127132&partnerID=40&md5=168f669d6e2d633cefce67750b3d71aept_BR
dc.date.available2015-06-30T13:43:50Z
dc.date.available2015-11-26T14:38:52Z-
dc.date.accessioned2015-06-30T13:43:50Z
dc.date.accessioned2015-11-26T14:38:52Z-
dc.description.provenanceMade available in DSpace on 2015-06-30T13:43:50Z (GMT). No. of bitstreams: 1 2-s2.0-49049127132.pdf: 189786 bytes, checksum: 9312be1b1686002f682e6b069ceb3c8c (MD5) Previous issue date: 1983en
dc.description.provenanceMade available in DSpace on 2015-11-26T14:38:52Z (GMT). No. of bitstreams: 1 2-s2.0-49049127132.pdf: 189786 bytes, checksum: 9312be1b1686002f682e6b069ceb3c8c (MD5) Previous issue date: 1983en
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/98721
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/98721-
dc.identifier.idScopus2-s2.0-49049127132pt_BR
dc.description.referenceCurie, Prener, Deep Center Luminescence (1967) Physics and Chemistry of II–VI Compounds, , M. Aven, J.S. Prener, North-Holland, Amsterdampt_BR
dc.description.referenceStringfellow, Bubem, (1968) Phys. Rev., 171, pp. 903-915pt_BR
dc.description.referenceGrimmeiss, Ovrén, (1976) J. Appl. Phys., 47, pp. 1103-1111pt_BR
dc.description.referenceYamaguchi, Yamamoto, Kondo, (1977) J. Appl. Phys., 48, pp. 5237-5244pt_BR
dc.description.referenceJones, Woods, (1974) J. Luminescence, 9, pp. 389-405pt_BR
dc.description.referencePankove, (1971) Optical Processes in Semiconductors, , Prentice Hall, New Jerseypt_BR
dc.description.referenceGrimmeiss, H.G. and Ovrén, C. Techniques of Junction Measurements in the study of Deep Energy Levels in Semiconductors, (To be published in J. Phys. E)Chantre, Vicent, Bois, (1981) Phys. Rev. B, 23, pp. 5335-5358pt_BR
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