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|Type:||Artigo de periódico|
|Title:||Radiative Recombination Of Deep Centers In Znse: In|
|Abstract:||The photoluminescence of In dopped ZnSe is studied under excitation with photon energy less and greater than the band gap energy. In the first case two emission bands A(1.098 eV) and B(2.015 eV) are observed and in the last case, three: A, B and C (2.233 eV). Band C should appear also in the first case since its transition energy is less than the excitation energy. We attribute the absence of the C line to the frequency dependence of the optical photoionization cross-section (OPCS) of the deep levels associated with the emission bands. In order to check this assumption we measured the photoluminescence excitation spectra at 77 K. This gives us the OPCS of the deep levels. The OPCS of band C is quite different from those of bands A and B. The latter are similar to each other and both are well explained by a theoretical model developed by Chantre et al. Besides, we tentatively interpret bands A, B and C as transitions involving donor and characteristical deep centers in ZnSe: Copper and self activated center. © 1983.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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