Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98704
Type: Artigo de periódico
Title: Ultrafast Transient Transport In Nonequilibrium Semiconductors
Author: Vasconcellos A.R.
Luzzi R.
Abstract: A study of ultrafast transient transport in nonequilibrium direct-gap polar semiconductors under high levels of excitation is presented. The dynamic equation for the drift velocity is derived. A numerical application, appropriate for the case of photoexcited carriers distributed in the zone-center valleys of GaAs, is done. The time evolution of the momentum relaxation time and drift velocity is discussed, and it is shown that, depending on experimental conditions, a velocity overshoot may result. © 1983 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevB.27.3874
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-4243601338&partnerID=40&md5=ee5a8708bef4857d2c8652c5b89a5d92
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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