Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98703
Type: Artigo de periódico
Title: Dependence On Volume Of The Phonon Frequencies And The Ir Effective Charges Of Several Iii-v Semiconductors
Author: Sanjurjo J.A.
Lpez-Cruz E.
Vogl P.
Cardona M.
Abstract: The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of eT* on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for eT* are interpreted by means of pseudopotential calculations of eT* versus lattice constant. © 1983 The American Physical Society.
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Rights: aberto
Identifier DOI: 10.1103/PhysRevB.28.4579
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0342942816&partnerID=40&md5=dc7df683007f7ddd07b7642ae5dd1265
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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