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Type: Artigo de periódico
Title: Dependence On Volume Of The Phonon Frequencies And The Ir Effective Charges Of Several Iii-v Semiconductors
Author: Sanjurjo J.A.
Lpez-Cruz E.
Vogl P.
Cardona M.
Abstract: The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of eT* on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for eT* are interpreted by means of pseudopotential calculations of eT* versus lattice constant. © 1983 The American Physical Society.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.28.4579
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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