Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Photoacoustic Investigation Of Semiconductors: Influence Of Carrier Diffusion And Recombination In Pbte And Si|
|Author:||Pinto Neto A.|
|Abstract:||The photoacoustic signal of a narrow-gap semiconductor and of Si is investigated as a function of the modulation frequency through the use of a heat-transmission configuration. It is shown that in the thermally thick modulation-frequency range the signal amplitude can single out the different heating sources responsible for the photoacoustic signal. It is also shown that from the signal phase data, as a function of the modulation frequency, we can obtain the values of the surface recombination velocity and the nonradiative band-to-band recombination time. © 1989 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.