Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98675
Type: Artigo de periódico
Title: Photoacoustic Investigation Of Semiconductors: Influence Of Carrier Diffusion And Recombination In Pbte And Si
Author: Pinto Neto A.
Vargas H.
Leite N.F.
Miranda L.C.M.
Abstract: The photoacoustic signal of a narrow-gap semiconductor and of Si is investigated as a function of the modulation frequency through the use of a heat-transmission configuration. It is shown that in the thermally thick modulation-frequency range the signal amplitude can single out the different heating sources responsible for the photoacoustic signal. It is also shown that from the signal phase data, as a function of the modulation frequency, we can obtain the values of the surface recombination velocity and the nonradiative band-to-band recombination time. © 1989 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.40.3924
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001222488&partnerID=40&md5=590f38892f5f0ae129257b036ac571ac
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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