Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98668
Type: Artigo de periódico
Title: Hall Effect Analysis In Highly Doped Sno2 Films
Author: Jousse D.
Abstract: The Hall results on sprayed tin oxide films are interpreted by a modified two-band model where a fraction of the electronic states remains strongly localized. Quantitative estimates are given for two origins of disorder : impurity distribution of Cl atoms in a polycrystalline matrix and amorphous structure of the host lattice. The mobility in amorphous SnO2 is measured down to 80 K and the values are compatible with transport through extended states in both conduction band and impurity band regimes. © 1983.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/0022-3093(83)90664-6
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020947859&partnerID=40&md5=7cde47ab973f853f686a6b081ab91125
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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