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|Type:||Artigo de periódico|
|Title:||Hall Effect Analysis In Highly Doped Sno2 Films|
|Abstract:||The Hall results on sprayed tin oxide films are interpreted by a modified two-band model where a fraction of the electronic states remains strongly localized. Quantitative estimates are given for two origins of disorder : impurity distribution of Cl atoms in a polycrystalline matrix and amorphous structure of the host lattice. The mobility in amorphous SnO2 is measured down to 80 K and the values are compatible with transport through extended states in both conduction band and impurity band regimes. © 1983.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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