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Type: Artigo de periódico
Title: Hall Effect Analysis In Highly Doped Sno2 Films
Author: Jousse D.
Abstract: The Hall results on sprayed tin oxide films are interpreted by a modified two-band model where a fraction of the electronic states remains strongly localized. Quantitative estimates are given for two origins of disorder : impurity distribution of Cl atoms in a polycrystalline matrix and amorphous structure of the host lattice. The mobility in amorphous SnO2 is measured down to 80 K and the values are compatible with transport through extended states in both conduction band and impurity band regimes. © 1983.
Rights: fechado
Identifier DOI: 10.1016/0022-3093(83)90664-6
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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