Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/98660
Type: Artigo de periódico
Title: Determination Of The Pressure Of The Semimetal-semiconductor Transition In The Presence Of A Resonant Acceptor Level
Author: De Carvalho M.M.G.
Fau C.
Averous M.
Abstract: An expression relating the pressure dependences of the resistivity and the mobile electron concentration is derived and used along with Hall effect and resistivity data to determine the pressure at which the semimetal-semiconductor transition occurs in Hg1-xCdxTe for x=0.124, at low temperatures. The method is applicable in the presence of a resonant acceptor level.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.332692
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0020826269&partnerID=40&md5=240e1fbfdf26a646315a1af676e2a7a6
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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