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Type: Artigo de periódico
Title: Determination Of The Pressure Of The Semimetal-semiconductor Transition In The Presence Of A Resonant Acceptor Level
Author: De Carvalho M.M.G.
Fau C.
Averous M.
Abstract: An expression relating the pressure dependences of the resistivity and the mobile electron concentration is derived and used along with Hall effect and resistivity data to determine the pressure at which the semimetal-semiconductor transition occurs in Hg1-xCdxTe for x=0.124, at low temperatures. The method is applicable in the presence of a resonant acceptor level.
Rights: aberto
Identifier DOI: 10.1063/1.332692
Date Issue: 1983
Appears in Collections:Unicamp - Artigos e Outros Documentos

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